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3-bit microelectromechanical systems digital capacitors with greater than 60:1 tuning ratios are monolithically integrated with CMOS using a post-CMOS fabrication process. The digital capacitors are composed of many switched capacitors in parallel, which use a combination of vertical (out-of-plane) electrothermal actuation and lateral (in-plane) electrostatic actuation to toggle their capacitance...
This paper presents a Si-CMOS-MEMS fabrication process which leaves the back-side silicon under the CMOS metal and oxide layers, and improves the uniformity of the back-side silicon using back-side grinding. The Si-CMOS-MEMS process includes a grinding process followed by a bonding process and conventional post-CMOS etch. A Si-CMOS-MEMS accelerometer is used to demonstrate the feasibility of the Si-CMOS-MEMS...
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