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We design high-power AlGaInP laser diodes emitting at ~640 nm. AlN and SiC submounts are used as heat sinks for the laser chips. The laser diode with SiC submount showed a higher thermal rollover power of 3.9 W and higher maximum conversion efficiency of 39% at 25°C. In the range of 15 – 35°C, the two types of lasers have similar characteristic temperature T0. At higher temperatures beyond 40°C, the...
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