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The design and physical implementation of a prototypical 500-MHz CMOS 4-T SRAM is presented in this work. The latch of the proposed SRAM cell is realized by a pair of cross coupled high-V/sub THP/ pMOS transistors, while the bitline drivers are realized by a pair of low-V/sub THN/ nMOS transistors. The wordline voltage compensation circuit and bitline boosting circuit, then, are neither needed to...
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