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In this letter, thin-film transistors (TFTs) were demonstrated with In2O3 channel layer prepared by metal–organic chemical vapor deposition (MOCVD). Treated by O2 microwave plasma on the In2O3 channel, high performance was obtained such as ultra-high field-effect mobility of 243 cm$^{\mathrm {\mathbf {2}}}$ /Vs, ON/OFF current ratio of $10^{\mathrm {\mathbf {7}}}$ , and high stability under negative...
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