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In article number 1906131, Gaokuo Zhong, Xiangli Zhong, Jiangyu Li, and co‐workers develop an all‐inorganic flexible ferroelectric field effect transistor (FeFET) based on an epitaxial Pb(Zr0.1Ti0.9)O3/ZnO heterostructure on a mica substrate, which not only operates under a small voltage and thus consumes low power, but also shows robust FeFET performance under large bending deformation, extended...
Flexible ferroelectric field effect transistors (FeFETs) with multiple functionalities and tunable properties are attractive for low power sensing, nonvolatile data storage, as well as emerging memristor applications such as artificial synapses, though the state‐of‐art flexible FeFETs based on organic materials possess low polarization, large coercivity, and high operating voltage, and suffer from...
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