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The Si-TaSi2 eutectic in situ composite for field emission is prepared by electron beam floating zone melting (EBFZM) technique on the basis of Czochralski (CZ) crystal growth technique. The directional solidification microstructure and the field emission properties of the Si-TaSi2 eutectic in situ composite prepared by two kinds of crystal growth techniques have been systematically tested and compared...
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