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We report a comprehensive evaluation of different device architectures from a device and circuit performance viewpoint: gate-all-around (GAA) nanowire (NW) FETs vs. triple-gate finFETs, both built using various doping schemes. GAA devices are obtained via a fins release process, high density compatible, at replacement metal gate (RMG) module, and outperform others per footprint. Junctionless (JL)...
Strained Ge p-channel FinFETs on Strain Relaxed SiGe are integrated for the first time on high density 45nm Fin pitch using a replacement channel approach on Si substrate. In comparison to our previous work on isolated sGe FinFETs [1], 14/16nm technology node compatible modules such as replacement metal gate and germanide-free local interconnect were implemented. The ION/IOFF benchmark shows the high...
A novel RMG process in which the n-type work function metal (nWFM) is deposited first and then selectively removed from the pMOS devices is presented for the first time. The key benefit of this nMOS 1st process lies in increased gate-fill space which results in about 10× improvement in the pMOS effective gate resistivity at gate lengths (LG) around 22 nm, an improvement which is predicted by modeling...
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