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C60 δ‐doped GaAs and AlGaAs layers are grown by migration enhanced epitaxy method. Sticking coefficients of C60 on GaAs and AlGaAs surfaces and electrical characteristics of the layers are investigated by secondary ion mass spectroscopy (SIMS) and electrochemical capacitance voltage (ECV) measurements. SIMS profiles indicate that the layers have well‐defined δ‐doped structures, and the sticking coefficients...
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