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The transport properties of metal‐insulator‐metal (MIM) capacitor‐like structures have been demonstrated to be sensitive to the metal‐insulator interface. BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition and RF sputtered Au has been used for the top electrode. As quantified by validated memristance measurements, Ar+ irradiation before deposition of the Au...
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