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Thin-film transistors (TFTs) with active channel layers of zinc oxide (ZnO) using a low-temperature chemical bath deposition have been studied. The ZnO films were fabricated on the defined-areas of bottom-gate type TFTs plate by immersing in a chemical bath containing zinc nitrate (Zn(NO 3 ) 2 .6H 2 O) and dimethylamineborane (DMAB) aqueous solution at 60 °C. Silicon oxide...
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