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Nickel silicon oxide mixture was sputtered on a‐Si with Ni‐Si alloy target with Ni:Si weight ratio of 1:9 and used as a new inducing source for metal induced lateral crystallization (MILC). The characteristics of the resulted poly‐Si materials induced by Ni‐Si oxide with different thickness were nearly the same. This means the metal induced crystallization with this new inducing source has wide processing...
A nano‐layer of silicon oxide mask with inducing windows was prepared on a‐Si. The inducing windows pre‐defined the crystalline nucleation positions. The morphology of the resulted MMIC poly‐Si depends on the width of the inducing windows, the thickness of silicon oxide outside the inducing windows, and the area density of the nickel inducing medium. Poly‐Si composed of continuous zonal domain (CZD)...
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