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Growth and interfacial properties of atomic layer deposited Al0.7Ti0.3Oy on Ge have been investigated as a potential high-k gate dielectric for future Ge-based metal oxide semiconductor devices. A sandwich structure of Al2O3/TiO2 stack is proposed for Al2O3/TiO2 intermixing and high-k/Ge interfacial passivation. The film thicknesses and interface microstructure are characterized by spectroscopy...
This paper is to explore the effects of the liquid structure transition (LST) on the solidification kinetics of Sn-30 wt% Sb alloy by the Newton thermal analysis (NTA) method and the solidified microstructure analysis. Influence of the cooling rate on solidification behavior and microstructure was also concerned. With a self-designed sand mold, the cooling curves of five points were collected automatically...
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