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The record high peak mobility of ~1050 cm2/V-s on (001) Ge substrate is demonstrated in NFET. High-quality Ge/GeO2 interface is ensured by rapid thermal oxidation (RTO) and remote ozone plasma treatment. The best achieved subthreshold swing is 150mV/dec and the on/off ratio is 2×104. The low defective n+/p junction produced a record high on/off ratio of 2×105, an ideality factor of 1.05 and strong...
We fabricated the single-crystalline Ge (sc-Ge) p-channel thin-film transistors (TFTs) with Schottky-barrier source/drain (S/D) on flexible polyimide substrates by a simplified low-temperature process (≤ 250°C), which preserves the high mobility Ge channel. Adhesive wafer bonding and Smart-Cut techniques were utilized to transfer the sc-Ge thin film onto polyimide substrates. The device has a linear...
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