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The atomically flat surface of Bi2Se3 due to the van der Waals bonded layer structure can reduce the interface trap. The metal-insulator-metal capacitors using Bi2Se3 has better quadratic voltage coefficient of capacitance. This is the first time that atomically flat metal surface is used in electronic devices.
The lateral current flow in the lateral light emitting diode can confine carrier distribution near the top surface, and thus relatively stronger direct band gap emission is observed.
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