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Based on atomic force microscopy, high-angle annular dark-field scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and Raman spectroscopy, Ge outdiffusion effects on SiGe quantum dots to form nanorings are studied using the Ultra-High Vacuum Chemical Vapor Deposition. The epitaxial Si layer grown on quantum dots with SiH4 and H2 precursors can not cover the whole quantum...
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