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In this research paper, fabrication of novel CdSe\ZnS QD-LEDs with solution processing method is presented, and the impact of trap energy levels in the electron and hole transport levels on these QD-LEDs brightness is investigated. Two types of QD-LEDs are fabricated with ITO as the transparent anode electrode, NiO nanoparticles as the hole transport layer (HTL), CdSe\ZnS QDs as the luminescent layer,...
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