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We propose a physics-based analytical model for gate capacitance-voltage characteristics of ultra-thin-body III–V-on-insulator (XOI) MIS structure. The accuracy of the analytical model is verified by comparing with TCAD results. The model is general and is applicable to different III–V channel materials.
A quasi-ballistic transport model for graphene FET (GFET) is analyzed in this work. The effect of top and back gate oxide layers of the model with different dielectrics are considered to analyze the device performance. A comparative study considering the equivalent oxide thickness (EOT) for the different oxide layers is done using the proposed model. It is found by the simulation results that the...
Rain fade slope is very useful knowledge used to design of the fade countermeasures in satellite communication link. Recently, ITU-R has proposed fade slope model by limiting elevation angle up to 500. Rain fade slope was measured from downlink of space-earth path of MEASAT3 in Kuala Lumpur (3.30 N, 101.70 E), Malaysia for one year period during 1st July 2010 – 30th June 2011. The elevation angle...
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