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Postgate annealing (PGA) in N2/O2 atmosphere at 300 °C for various annealing time is performed on enhancement mode AlGaN/GaN MOSFET fabricated using a self-terminating gate recess etching technique. After 45-min annealing, the device OFF-state leakage current decreases by more than two orders of magnitude and thus a low OFF-state leakage current of $\sim 10^{-13}$ A/mm is obtained at room temperature,...
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