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In this paper, a new type of high-speed electroabsorption modulator (EAM) based on quantum dot (QD) p–i–n heterostructure is demonstrated. The QD layers sandwiched by p-AlGaAs and n-AlGaAs are grown by multilayer InGaAs self-assembled QD with luminance wavelength of 1300nm, serving as the active region of EAM. The photocurrent spectrum measurement exhibits a red shift of 15nm in QD transition energy...
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