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GaN decomposition at high‐temperature annealing after ion implantation is a huge hurdle to the further maturation of GaN technology. To solve this issue, this work studies the impact of different protective layer structures on high‐temperature annealing of GaN under 1200–1250 °C, including single‐layer structures and double‐layer structures. Single‐layer structures are the SiN layer grown by low‐pressure...
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