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We study by photoluminescence the spatial distribution of minority carriers (holes) arising from their anomalous photon-assisted diffusion upon photo-excitation at an edge of n-InP slab for temperatures ranging from 300 K to 78 K. Giant enhancement in the spread of holes — over distances exceeding 1 cm from the excitation edge — is seen at lower temperatures. We show that the experiment provides a...
We study the photoluminescence spectra of n-doped InP bulk wafers, both in the reflection and the transmission geometries relative to the excitation beam. From the observed spectra we estimate the spatial distribution of minority carriers allowing for the spectral filtering due to reabsorption of luminescence in the wafer. This distribution unambiguously demonstrates a non-exponential drop-off with...
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