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The carrier injection efficiency (CIE) and the radiative efficiency (RE) are experimentally determined in order to clarify the origin of the efficiency droop in blue-emitting GaN light emitting diodes. The difference in the shape of RE curves and the external quantum efficiency (EQE) curves shows the CIE is a function of the injection current, while the RE curves show the droop behavior to a certain...
The strain and piezoelectric fields in InGaN blue light-emitting diodes on a GaN layer, which is grown on a planar sapphire substrate or patterned sapphire substrates (PSSs), such as a microsized PSS and a nanosized PSS (NPSS), are investigated by micro-Raman spectroscopy and electroreflectance (ER) spectroscopy. The obtained piezoelectric field in InGaN multiple quantum wells (QWs) grown on the planar...
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