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Ex situ depth‐dependent strain distribution in AlGaN‐based deep ultraviolet light‐emitting diodes (DUV LEDs) was investigated through surface‐plasmon‐enhanced Raman spectroscopy with an optimally truncated structure. In this study, the strain was selectively analyzed by an ex situ method as a function of the distance from the sapphire substrate followed by AlN relaxation layers. Experimental results...