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This paper investigates a novel AlGaN/GaN HEMT-based high power amplifier for continuous wave operation in industrial power applications. A GaN HEMT device with a power density of 50 W/mm² was developed to counter specific challenges in these applications. Based on RF load-pull measurements of the developed transistors an inverse class-F power amplifier with an output power of 300 W and an efficiency...
This article presents the design approach, realization and measurement results of a highly efficient double octave wideband power amplifier using a GaN-HEMT bare-die. An iterative approach to obtain the optimum source and load impedances is described. Multiple harmonics are analyzed using harmonic load-pull simulation and a reliable large-signal device model. The design was realized exploiting a transition...
The class-B/J mode continuum in power amplifiers (PAs) defined at the current source plane is discussed considering different parasitic elements including CDS as well as the package. Based on this realistic device description the change of the continuous load impedances depending on the reference plane is demonstrated. It is shown that the design flexibility predicted by the continuous mode theory...
This paper presents a GaN HEMT based harmonically tuned broadband power amplifier. The amplifier uses the CGH40120F GaN device from Cree Inc. and delivers 100 W output power across the bandwidth 1.55–2.25 GHz. The minimum power added efficiency (PAE) over the bandwidth is higher than 60 % with maximum values up to 70 %, respectively. Measurements using digital modulated signals were performed, too...
The influence of the harmonic impedances on the power amplifier performance is presented across a wide bandwidth. Based on this method, a set of impedances for the first, second and third harmonics across the band was found which do not affect output power (POut) and power added efficiency (PAE). At the 3 dB compression point, the measured Pout is 40 dBm ± 1.5 dB, and the PAE is between 58.7 %-78...
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