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Resistive Switching
In article number 2107727, Keehoon Kang, Jae Sung Lee, Takhee Lee, and co‐workers analyze the resistive switching properties of organometal perovskite unipolar resistive memory devices with current noise spectra from various resistance states. Based on a percolation model of current paths, the noise scaling behavior correlates with conducting filaments having a fractal geometry,...
Organometal halide perovskites have emerged as potential material systems for resistive memory devices besides their outstanding optical and electrical properties. Although halide‐perovskite resistive memory has the advantage of operating with a low voltage and large on/off ratio, random distribution in operation voltage remains a challenge in memory application. This stochastic operation characteristic...
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