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Smooth, 4–6-nm thick hafnium oxide films were grown by atomic layer deposition from HfI4 or HfCl4 and H2O on SiO2/Si(1 0 0) substrates at 300 °C. Non-uniform films were obtained on hydrogen-terminated Si(1 0 0). The stoichiometry of the films corresponded to that of HfO2. The films contained small amounts of residual chlorine and iodine. The films deposited on SiO2/Si(1 0 0) were amorphous, but crystallized...
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