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The growth rate and properties of atomic layer deposited (ALD) Al2O3 thin films were examined by varying the water dose in the Al(CH3)3-H2O process at growth temperatures of 150–500°C. When the growth rate was followed as a function of water pulse time, it was found to saturate with both small and large water doses but the saturated level was substantially higher for the large water dose, 1.2 vs....
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