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Electrical properties of organic-inorganic p–n heterojunction structures with tetracene (Tc) and zinc oxide (ZnO) films were investigated. The ZnO films had different n-type carrier concentrations that varied from ∼1015 cm−3 to 1019 cm−3. Lower n-type ZnO layers resulted in decreased reverse currents in the ZnO:Al/ZnO/Tc/Au structures and in an improvement of their asymmetric properties. Experimentally...
Aluminum-doped zinc oxide (ZnO:Al, AZO) electrodes were covered with very thin (∼6nm) Zn 1−x Mg x O:Al (AMZO) layers grown by atomic layer deposition. They were tested as hole blocking/electron injecting contacts to organic semiconductors. Depending on the ALD growth conditions, the magnesium content at the film surface varied from x=0 to x=0.6. Magnesium was present only at the...
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