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The effect of Inductively Coupled Plasma H2 or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400–550 Å. At high ion fluxes or energies there can be type conversion of the initially p-GaN surface. Post etch annealing at 900°C restores the initial...
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