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The impact of PIDs on device yield was evaluated by detecting PIDs and performing a correlation analysis between the PID detection results and device yield of a probing test. It was consequently confirmed that PID can be detected sensitively with suitable wafer-surface inspection and SEM tools. It was also confirmed that PID correlates with device yield and that gate-dielectric defects are caused...
Performance degradation of n-MOSFETs with plasma-induced recess structure was investigated. The depth of Si recess (dR) was estimated from the experiments by using Ar gas plasmas. We propose an analytical model by assuming that the damage layer was formed during an offset spacer etch. A linear relationship between threshold voltage shift (DeltaVth) and dR was found. Device simulations were also performed...
Plasma process-induced recess structure and the latent defect site density are quantitatively evaluated in detail by using optical and electrical methods combined with a classical molecular dynamics (MD) simulation. A new framework is proposed and demonstrated for predicting the relationship between plasma process parameters and MOSFET performance degradation.
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
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