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The direct current (DC) conductivity of amorphous–nanocrystalline Si films deposited by the plasma enhanced chemical vapour deposition method was studied as a function of the structural properties obtained by Raman spectroscopy and grazing incidence small angle X-ray scattering (GISAXS).The crystalline fraction estimated from the Raman spectra altered between 0 and 60% while the average size of the...
Thin silicon films were deposited by the plasma-enhanced chemical vapor deposition using standard 13.6MHz radiofrequency gas discharge in silane diluted by hydrogen. The deposition conditions were kept constant for all samples, with the exception of only one parameter: the degree of dilution was varied from low values that produce amorphous layers up to the high dilution that resulted in a high degree...
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