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Gallium (Ga) doping in Czochralski (CZ) Si crystal growth has been investigated. When Ga was added directly to the molten Si in a rapid operation, the Ga concentration in the crystals was the same as the designed values. It was found that only a few Ga atoms evaporated from Si melt surface during crystal growth. From measurements made in steps of several millimeters along the growth direction, it...
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