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As the CMOS device scaling reaches to sub 20 nm scale by 2016 [1], multi-gate MOSFET architectures are poised to replace the conventional bulk devices [2]. Although non-planar multi-gate architectures can come in various forms including double-gate (DG) MOSFETs, FinFET, MIGFET, Π-gate or Ω-gate versions, they operate on the same premise of increasing current drive via multiple channels and better...
Tuning the relative energy levels in coupled quantum dots with an applied electric field results in controllable spin interactions of bound carriers. These interactions may provide new directions in engineering these systems for optical and spintronic applications. Using polarization resolved photoluminescence experiments we observe spin dependent effects in the spectra which vary as a function of...
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