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Patterned silicon-on-insulator (SOI) substrates have been proposed to grow low defect density CdTe. The CdTe epilayers so obtained will enable the growth of good-quality mercury cadmium telluride (HgCdTe) layers subsequently. This would increase the scope for better performance of infrared detectors fabricated on the HgCdTe epilayers. A background of our previous work on metal organic chemical vapor...
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