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By using p-type modulation doping in the highly strained MQWs of high-speed 850 nm VCSELs, significant enhancements in speed, slope efficiency, and maximum power have been simultaneously achieved as compared to those of un-doped references.
850nm VCSELs with record-low driving-current-density (8kA/cm2), small resistance (60Ω), wide-bandwidth (26GHz), and small energy-to-data-rate ratio (228fJ/bit, 3.5mA) for >41Gbit/sec error-free transmission over 100 (2) meter OM4 fiber at room-temperature (85°C) have been demonstrated.
We demonstrate novel structures of an 850-nm vertical-cavity surface-emitting laser (VCSEL) array for high output power, single-lobe far-field pattern, and narrow divergence angle. By using the Zn-diffusion process with proper sizes of oxide-current-confined and Zn-diffusion apertures, each unit of VCSEL in the demonstrated array is highly single-mode (side-mode suppression ratio 30 dB) with a narrow...
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