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We propose an engineering of the optical properties of GaAs/AlGaAs quantum wells using AlAs and InAs monolayer insertions. A quantitative study of the effects of the monolayer position and the well thickness on the interband and intersubband transitions, based on the extended-basis sp3d5s⁎ tight-binding model, is presented. The effect of insertion on the interband transitions is compared with existing...
We report an investigation of the in-plane anisotropy of parabolic (PQW) and half-parabolic (HPQW) Cd 1-x Mn x Te quantum wells (QWs) grown by molecular beam epitaxy on (001) oriented GaAs substrates. For HPQW we obtain a good description using a microscopic model related to the atomic structure of interfaces. For PQW a strong anisotropy of excitonic reflectivity (not predicted...
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