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Nonvolatile resistive random‐access memory devices based on graphene‐oxide‐wrapped gold nanospheres (AuNS@GO) are fabricated following a one‐step room‐temperature solution‐process approach reported herein for the first time. The effect of the thickness of the GO layer (2, 5, and 7 nm) and the size of the synthesized AuNS (15 and 55 nm) are inspected. Reliable bistable switching is observed in the...
In article number 1604604, Cheolim Park, Dong Ha Kim, and co‐workers report nonvolatile flexible ReRAM devices utilizing Au nanoparticles‐graphene oxide core@shell nanostructures as dielectric layers. Obtained via an allsolution‐based one‐step process, the devices showed reliable bistable switching behaviors with ON/OFF ratio of ∼103, relatively low operating voltage (−2.5 V) at room temperature,...
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