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Residual stress gradient characterization by the ion beam layer removal method (ILR), using a milling step of 10nm, was applied to W/TiN stacks processed on thermal SiO2-insulated standard silicon wafers. The stress profiles indicate a pronounced stress gradient with high tensile, as well as compressive stress concentrations in polycrystalline W and amorphous TiN sublayers ranging between 3.5 and...
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