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We report on the dc and microwave characteristics of an InP/InGaAsSb/InGaAs double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic In0.37Ga0.63As0.89Sb0.11 base reduces the conduction band offset (DeltaEC) at the emitter/base (E/B) junction and the base band gap, which leads to a very low VBE turn-on voltage of 0.35 V at 1 A/cm2. Current gain of 125...
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