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This paper presents a high-efficiency broadband GaN HEMT class-F Doherty Power amplifier at 3.5GHz for LTE-Advanced applications. The carrier and peak amplifier of the Doherty amplifier both adopts class-F design strategy to obtain higher efficiency, in which the transmission-line harmonic suppression network for controlling the second and third harmonics is employed. Measurement results show that...
In this paper, a digital pre-distortion platform is designed for linearization of wideband power amplifier with nonlinearity and memory effect. The proposed platform consists of digital signal processing (DSP), field-programmable gate array (FPGA), analog to digital converter (ADC) and digital to analog converter (DAC) which are all operating under a high speed of 400MHz. The platform covers a frequency...
In this paper, a high efficiency GaN Doherty power amplifier (PA) with broad signal bandwidth for LTE-Advanced applications is presented. The carrier and peak amplifier of the Doherty PA, which operate at different classes, have different matching circuits in order to optimize the performance of each amplifier. To validate the performance of the proposed Doherty PA in wideband system, it was tested...
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