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Monolithic integration of high-performance AlGaN/GaN high-electron mobility transistors (HEMTs) and blue light emitting diodes (LEDs) on sapphire substrates has been demonstrated by metal organic chemical vapor deposition selective growth technique. The integrated HEMT-LED exhibits a peak transconductance of 244 mS/mm, a maximum drain current of 920 mA/mm, and an ON-resistance ...
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