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A soft-program immune structure for a unified RAM (URAM) is presented. A unique feature of URAM is the multifunctionality of a flash and capacitorless 1T-DRAM in a single transistor. However, charge trapping into O/N/O during a cyclic 1T-DRAM operation can cause an undesirable threshold voltage shift, resulting in an unstable URAM operation called a soft program. In a gate-to-source/drain nonoverlap...
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