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We experimentally realize a cross-slot waveguide based on GaAs-AlGaAs-GaAs substrate carrying both of transverse-electric slot mode and transverse-magnetic slot mode. A low refractive index AlOx layer is formed between two high index GaAs layers by thermal oxidation method. A polarization splitter is obtained through a 25-μm-long ultracompact directional coupler based on the waveguide. The measured...
Multimode interference (MMI) structure is introduced in semiconductor laser to realize higher power and shorter device length. We use BPM simulation in the device design. MMI-LD was fabricated and realized in InGaAsP/InP based material and output power of up to 2.296 mW was achieved. The implemented MMI-LD exhibits stable single-mode output operating at a wavelength of 1.52 mum at 10degC. As a comparison,...
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