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In low voltage SRAM for IoT application, although static noise margin (SNM) and write margin (WM) decide VMIN, Icell / Ioff ratio and Icell are also important in order to keep performance and achieve better operating efficiency. We propose a new mixed Vth RP design which can achieve better Icell and Icell / Ioff ratio. Furthermore, combination of the proposed mixed Vth and boosted read wordline (RWL)...
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