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Since the first 3b/cell (X3) NAND flash memory paper in ISSCC 2008 [1], market demand for applications using high-density low-cost flash memory such as tablets, smart phones, and SSDs, has increased rapidly. Various electronic devices already use X3 NAND. The use of all BL (ABL) architecture, advanced circuitry, and enhanced algorithms enables this work to achieve 18MB/s performance, allowing penetration...
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