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The resistance of wiring with a width of less than 40 nm was firstly evaluated by using an EUV lithography (lambda=13.5 nm). The resistance was quite high in narrow wiring with conventional Ta barrier film, while a very low effective resistivity rhoeff of lower than 4.5 muOmega cm was obtained by using PVD-Ru barrier film. This difference was attributed to combination of thinner barrier metal films...
The recently developed helium ion microscope (HIM) can be operated in three imaging modes; ion induced secondary electron (SE) mode, Rutherford Backscatter imaging (RBI) mode, and scanning transmission ion imaging (STIM) mode. When low k dielectric or copper interconnects are imaged in these modes, it was found that unique pattern dimension and fidelity information at sub-nanometer resolution is available...
To reduce the effective k-value for the 45-nm node, direct CMP of a porous SiOC film without a protective cap layer is required. The hydrophilic-lipophilic balance (HLB) of a surfactant included in the post-CMP cleaning chemical was found to be a parameter that determines SiOC film damage and cleaning ability after direct CMP. To suppress the k-value increase and watermark generation, we need to reduce...
The Cu interconnects with porous SiOC-CVD (=p-SiOC, k=2.5) was successfully integrated into 45 nm technology node featuring an effective k-value (=k-eff) decreasing process. The decrease in k-eff was achieved by removing the capping layer on p-SiOC film and the damaged interface layer in p-SiOC using dry-etching process. Using this capping layer dry-etching process (=CEP), a 10% reduction in k-eff...
Dual damascene Cu interconnects with Keff below 2.0 have been demonstrated for the first time. Air gaps between Cu lines were formed with a low K SiOC film in a carefully designed manner. CoWP cap layers were introduced to protect the Cu lines and to eliminate a dielectric liner layer. In addition, AGE (Air Gap Exclusion) was applied to solve crucial problems related to the air gaps. Keff of 1.9 was...
A new technology for manufacturing low Keff (<2.5) Cu interconnects with air gaps has been first proposed and demonstrated. Key points in this technology are suppression of damage to lines during air gap formation and exclusion of air gaps by a carefully designed manner. Using this technology, Keff lower than 2.5 was realized without any degradation of yield, performance and reliability
The electromigration (EM) performance of dual damascene Cu lines has been investigated correlated with quality of Cu lines. The results on the EM test showed that the EM lifetime decreases as the linewidths decrease. Failure analysis after EM test revealed that EM properties of damascene Cu lines are dominated by the transport of Cu atoms along an interface between a Cu line and a barrier layer. It...
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