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We investigated the microstructure and the stress of high-k Hf–Y–O thin films deposited by atomic layer deposition (ALD). These hafnium oxide based films with a thickness of 5–60nm stabilized in crystal structure with yttrium oxide by alternating the Hf- or Y-containing metal precursor during deposition. The microstructure was investigated by XRD and TEM in dependence of substrate and deposition temperature...
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