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During the past five years numerous mixed signal integrated circuits (ICs) have been designed, processed, and characterized based on our 0.2 /spl mu/m gate length AlGaAs/GaAs quantum well HEMT technology. Utilizing the inherent advantages of the AlGaAs/GaAs material system, optical, analog, microwave, and digital functions have been integrated monolithically. Examples are a chip set for 40 Gb/s optoelectronic...
A single-chip frequency synthesizer using a 0.3 micron enhancement-depletion HEMT-process is presented. The circuit is a prototype for the local oscillator source of future low cost millimeter wave systems, such as intelligent cruise control radars (76 GHz) or very high speed wireless LANs (60 GHz). It integrates all the components needed to generate a phase locked signal around 18 GHz, i.e. the VCO,...
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