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A three-dimensional (3D) analytical model is derived in this paper to predict the temperature distribution in silicon carbide (SiC) MESFET. The analytical results are almost similar to the simulation results obtained by Atlas. The model describes the influence of the structural parameter and input power on temperature distribution. In some previous papers, analytical solution was obtained by the customary...
In this paper, we have analyzed the resistances (specific on-resistance and drain to source resistance) and transconductance of SiC MESFET. Source diffusion, channel, drift region, epi-layer and substrate resistances those contribute to the specific on-resistance have been analyzed. Effect of change in the junction depth due to post annealing on the implant range parameter is also considered. Half...
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