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An improved match line (ML) sensing scheme for ternary content addressable memory (TCAM) is presented in this paper. Selective precharge combined with charge sharing technique reduces ML search energy consumption. Use of lower Vt transistors in the sense amplifier allows further reduction of energy. Series gating transistor eliminates energy consumption associated with increased leakage of lower V...
This paper presents a match line (ML) sensing scheme based on current race (CR) type match line sense amplifier (MLSA). The MLSA uses feedback mechanism twice in order to decrease currents to the mismatched MLs. This reduces the energy consumption and increases voltage margin while maintaining high search speed. Simulation using 130nm 1.2V CMOS logic shows large improvement in voltage margin and ∼59%...
A new match line sensing scheme for ternary content addressable memory (TCAM) is presented in this paper. Selective precharge is combined with charge sharing technique to reduce the match line (ML) energy consumption. Simulation performed using 130nm 1.2V CMOS logic shows minimum ∼35% dynamic energy reduction compared to current race (CR) scheme. The technique also achieves ∼41% speed improvement...
Ternary content-addressable memory (TCAM) has become popular in high-speed lookup intensive applications. Large dynamic power consumption of TCAMs makes power reduction techniques an active area of research. In this paper we present a new match-line (ML) sensing scheme employing ML segmentation and positive feedback in the sense amplifier of the first segment. Simulation using 130nm 1.2V CMOS logic...
This paper presents a match-line architecture to reduce the energy consumption of Ternary content-addressable memory (TCAM) and to increase search speed. The proposed match-line (ML) sensing scheme uses a two-step comparison to filter out most of the mismatched MLs in the first step so that the second step comparison is never activated for those mismatched MLs. Simulation using 130-nm 1.2-V CMOS logic...
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